14
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
?
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2010
?
Initial Release of Data Sheet
1
Nov. 2010
?
Updated frequency in overview paragraph from ?2300 to 2400 MHz? to ?2300 to 2620 MHz? to show the
broadband performance of the part, p. 1
?
In Table 2, Thermal Characteristics, Pout
= 16 W CW thermal resistance value changed from 0.91 to
0.89_C/W and Pout
= 80 W CW thermal resistance value changed from 0.91 to 0.55_C/W. Thermal
values now reflect the use of the
combined dissipated power from the carrier amplifier and peaking
amplifier, p. 2.
?
Broadband IRL data removed from Fig. 4, Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance and Fig. 8, Broadband Frequency Response graphs. Data not valid indicator of
product performance due to circuit implementation, p. 6, 7.
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功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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